| 학회 | 한국재료학회 |
| 학술대회 | 2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 | 18권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료(Optical Funtional and Display Materials) |
| 제목 | Characteristic Enhancement of GaN on Patterned Sapphire Substrate Growth Condition Variation |
| 초록 | Several approaches involving epitaxial lateral overgrowth (ELOG) or mask-less processes have been investigated. Among them, ELOG on the patterned sapphire substrate has an advantage of low dislocation density. We investigated the improvement in the properties of undoped GaN film using a cone-shape patterned sapphire substrate under the various growth condition. It appeared that the various growth temperature of the undoped GaN film showed the differences of crystal quality. As shown the SEM image, the GaN film grown at 1070°C is the highest quality coalescence among the grown GaN studied. Full width at half maximum (FWHM) at the (002) x-ray diffraction was increased as the temperature increased from 1070°C to 1110°C due to dislocation density. We also changed the growth pressure from 85torr to 200torr because of 3D-growth acceleration in the primary growth. The morphology of GaN film increased pressure was analyzed by the atmic force microscopy (AFM). Additionally, the optical properties of the GaN film on cone-shape patterned sapphire substrate were characterized using transmission electron microscopy (TEM). |
| 저자 | Jung Yeop Hong1, Do Han Lee2, Sung Wook Moon3, Dong Jin Byun4 |
| 소속 | 1Department of Nano-Photonics Engineering, 2Korea Univ., 3Seoul, 4South Korea |
| 키워드 | GaN; PSS; MOCVD |
