| 초록 |
Top-emission organic light-emitting diodes (TEOLEDs) have attracted much attention due to their structural advantages for the fabrication of high resolution active matrix display devices. However, large interface energy barrier between a reflective metal anode and organic layer impedes effective hole injection into the devices, causing significantly high driving voltages as well as low device efficiencies. To overcome these problems, we have developed a novel p-type dopant of copper iodide (CuI) for use as a hole injection layer (HIL). The TEOLEDs with CuI-doped 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-4,4' diamine (NPB) HIL exhibit operation voltages of 6 ~ 7 V at 1000 cd/m2, which is significantly lower than that of the device without doping system. The effects of doping on the device performance are further described in detail in the presentation. |
