| 초록 |
Graphene has superior electrical properties such as high electrical conductivity, carrier mobility and resistivity. However, it has a difficulty in using as a semiconductor because its band gap is zero. In this work, we performed p-type doping of graphite by substituting C atoms with B atoms and extracting boron of boron-doped graphite. Doping is a common method to open the band gap in graphene. The Boron atoms introduce chemical disorder that is change from flat to curved plane. High-quality graphene is obtained by mechanical exfoliation of graphite. The layer number of graphene was identified by Atomic force microscopy (AFM). The effects of the doping and the de-doping of graphene were confirmed by Raman spectroscopy and Kelvin probe force microscopy (KPFM). |
