| 초록 |
The use of PEDOT:PSS as a hole injection layer(HIL) for solution-processed OLEDs has been known to be problematic due to anITO etching issue and the associated device lifetime degradation. Nevertheless,many efforts to replace the acidic PEDOT:PSS with transition metal oxides,metal complexes, and other polymers for the HIL have not been entirelysuccessful in terms of fabrication process and device performance. Here, we demonstratean ultra-thin interfacial layer grown by Atomic Layer Deposition (ALD) that effectivelyprevents the etching of ITO by the PEDOT:PSS HIL. The atomically thin ALD layerfacilitates charge injection via a tunneling effect and thus, it maintains theelectrical and optical characteristics of OLEDs while improving theiroperational lifetimes. |
