| 초록 |
Dual-gated (DG) thin-film transistor (TFT) with amorphous InGaZnO (IGZO) channel is fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (350 nm) PVP layer exhibited quite good dielectric behaviors, such as dielectric strength of ~1.5 MV/cm (~10-8 A/cm2), capacitance of 8.9 nF/cm2, and dielectric constant of ~4.02. Compared to the two types of single-gated (SG) devices, DG devices provided a higher on current, and showed much stronger gate controllability over the conventional SG TFTs. Under positive bias stress, the lowest Vth shift of 0.17 V was observed for IGZO TFT with DG structure. It is demonstrated that DG operation, which must play a critical role in novel low power devices, is an appropriate gate configuration to produce high performance TFTs.
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