| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 가을 (10/06 ~ 10/08, 대구컨벤션센터(EXCO)) |
| 권호 |
40권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Patterned Growth of Graphene/Amorphous Carbon Heterostructure through One-Pot Synthesis |
| 초록 |
Graphene is expected to play a role as an essential building block of 2D integrated circuit due to the simple modification of its electrical properties by doping and patterning. However, in order for 2D integrated circuit to be well worked, it is necessary to find another building block as insulator and combine these two building blocks into one circuit. Recently, although the lateral hetero-structures with graphene and hexagonal boron nitride can be grown using two-step CVD method, it is complicated and not applicable to the system with more than two components. Here, we report that one step growth of graphene/amorphous carbon (G/AC) hetero-structures from solid source as polystyrene (PS) via UV irradiation. The chemical pattern of neat/cross-linked PS via UV irradiation on copper foil converted to the pattern of G/AC in CVD. Because the resistance of amorphous carbon is 100 times higher than that of graphene, amorphous carbon is worked as insulator. |
| 저자 |
김진곤1, 홍병희2, 김광수3, K. S. Novoselov4, 황찬용5, 이종훈3, 한상우6, 이태걸5, 박승규1, 현승1, Artem Mishchenko4, 이승기7, 허성6, 변진석1, 채동훈5, 박효주3, 유성욱1, 김용진4, 손진경6, 박재성5, 박범진1
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| 소속 |
1포항공과대, 2서울대, 3UNIST, 4Univ. of Manchester, 5한국표준과학(연), 6KAIST, 7연세대 |
| 키워드 |
graphene; amorphous carbon; bottom-up growth; graphene growth from polymer
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| E-Mail |
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