| 학회 | 한국화학공학회 |
| 학술대회 | 2009년 가을 (10/22 ~ 10/23, 일산 KINTEX) |
| 권호 | 15권 2호, p.2190 |
| 발표분야 | 재료 |
| 제목 | GaN films synthesized by inductive coupled PECVD |
| 초록 | In this study, GaN films were synthesized by inductively coupled plasma enhanced chemical vapor deposition method. Ga(mDTC)3 as a precursor of GaN material was prepared by dissolving Ga(NO3)3 8H2O and sodium N,N-dimethyldithiocarbamate dehydrate (TCI) with 1:3 mole ratio of Ga Salt to the ligand in Methanol. This Ga(mDTC)3 powder was mixed with chloroform solution (CH3Cl) using a ultrasonic machine and GaN film was deposited by a spin coating method. These samples were treated with inductively coupled plasma. The inductively coupled plasma was generated by RF power and the gases were the mixture of NH3 and N2 gas. The film thickness and surface morphology of GaN were characterized by a scanning electron microscope. The crystallinity of GaN films was analyzed by X-ray diffraction and the composition of the films were measured by energy dispersive X-ray spectroscopic method.This work was supported by the Korea Research Foundation(KRF) grant funded by the Korea government(MEST) (No. 2009-0077228) |
| 저자 | 김동욱, 홍기남, 김홍탁, 박진호 |
| 소속 | 영남대 |
| 키워드 | PECVD; inductive coupled plasma(ICP); GaN |
| 원문파일 | 초록 보기 |
