| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Properties of phosphorus doped silicon layer in tunnel oxide passivated contact solar cell |
| 초록 |
Today, many group presented high efficiency Si solar cells over 25% in efficiency. One of the promising structures is the TOPCon cell presented by Fraunhofer ISE in Germany. Recently, a 25.1% tunnel oxide passivated contact (TOPCon) cell based on n-type Si was reported. The highlight of this cell is the excellent interface passivation quality achieved by applying a thin (＜ 2 nm) oxide layer. The oxide layer was located between the doped poly-Si and the Si substrate. In this study, we fabricated TOPCon cell by depositing phosphorus doped a-Si and polysilicon each. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. We analysed these layers by various methods and could get good results on the phosphorus doped Si contact in TOPCon solar cell. |
| 저자 |
송호영1, 이창현1, 현지연1, 최동진1, 박현정1, 배수현1, 이해석2, 강윤묵2, 김동환1
|
| 소속 |
1고려대, 2KU-KIST그린스쿨 대 |
| 키워드 |
Silicon solar cell; Tunnel oxide passivated contact; carrier-selective contact; lifetime measurement
|
| E-Mail |
|
