| 학회 | 한국공업화학회 |
| 학술대회 | 2022년 봄 (05/11 ~ 05/13, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 | 26권 1호 |
| 발표분야 | 포스터-에너지저장·변환 |
| 제목 | Application of Non-IGZO Metal Oxide Material in Active Layer of Oxide Thin-Film Transistor by Solution Process |
| 초록 | Solution-processed oxide thin-film transistors (TFTs) have been extensively investigated due to excellent composition control and lower production cost. In particular, Indium-Gallium-Zinc-Oxide (IGZO) based oxide TFTs have higher electron mobility than a-Si TFTs and they have good uniformity compared to the poly-Si TFTs. However, since IGZO is expensive by using rare elements such as indium and gallium, it is necessary for non-IGZO based oxide TFTs materials using inexpensive elements. In this study, we propose a novel non-IGZO based oxide semiconductor material introduced by solution process. As a result, molar ratio of novel metal oxides was optimized by efficient control of the components. The TFTs based on these exhibited to have a sub-threshold swing (SS) of 0.7V/dec, Ion/Ioff ratio of 3.22×105, and field-effect mobility of 4.23cm2/(V·s). |
| 저자 | 황부경1, 박인표2, 최준영1, 홍정표1, 허수원1 |
| 소속 | 1한국세라믹기술원, 2한국세라믹기술원 / 부산대 |
| 키워드 | Oxide thin-film transistors; Solution-process; Non-Indium-Gallium-Zinc-Oxide |
