| 학회 |
한국재료학회 |
| 학술대회 |
2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 |
19권 2호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Effect of In concentration on electrical and optical properties of In-doped MgxZn1-xO films |
| 초록 |
Mg and In co-doped ZnO thin films were prepared on glass substrates by RF magnetron sputtering technique using different In concentration from 1at% to 5at% while the Mg concentration was fixed at 5at%. The effect of In concentration on the morphological, compositional, electrical, and optical properties of MIZO thin films were investigated. The cross-sectional field emission scanning electron microscopy images of MIZO thin films showed that all the thin films have a columnar structure. The MIZO thin film deposited at the In concentration of 3at% showed the best electrical characteristics in terms of the carrier concentration (2.457ｘ1020 cm-3), charge carrier mobility (9.83 cm2V-1s-1), and a minimum resistivity (2.584ｘ10-3 Ωcm). UV-visible spectroscopy studies showed that the MIZO thin films were a high transmittance over 80 % in the visible region and the absorption edge of MIZO thin films were very sharp and shifted toward lower wavelength side from 348 nm to 336 nm with In concentration from 1at% to 5at%. The band gap energy of MIZO thin films were wider from 3.47 eV to 3.59 eV with In concentration from 1at% to 5at% |
| 저자 |
전기석1, 신승욱2, 김인영1, 조은애1, 문종하1, 허기석3, 이정용2, 김진혁1
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| 소속 |
1전남대, 2KAIST, 3생산기술(연) |
| 키워드 |
Mg and In co-doped ZnO; Trans Parent Oxide; RF magnetron sputter; Quaternary compound
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| E-Mail |
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