| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Characteristics of ALD VO2 with H2O reactant |
| 초록 | The necessity of low power and high-density memory devices has attracted considerable interest with integrated circuit technology due to the physical limits of scalability in dynamic random access memory (DRAM). Reasonably designed materials and technologies have been the subjects of active research for the next generation of memory device. It should exhibit not only a high capacity and low power consumption but also high-speed operation and long retention based on simple structures. Therefore, resistance random access memory (ReRAM) has positive prospect for next generation non-volatile memory because of its small cell size, long retention time, and fast switching speed. Among the various oxide switching materials for ReRAM device, vanadium dioxide (VO2) has attracted much attention owing to its metal-insulator transition (MIT) property along with a high ON/OFF ratio, fast switching speed, and high current density. The crystal structure of VO2 is distorted rutile(monoclinic) structure below 68℃. The crystal structure of VO2 changes from distorted rutile to undistorted rutile structure (tetragonal) when VO2 receives energy such as heat or light. Many results has been reported in paper about thin film deposition of VO2, typically physical vapor deposition (PVD), or chemical vapor deposition (CVD) as deposition methods. However, it is hard to deposit the film uniformly in 3D device, and make complex structure. Alternatively, ALD can deposit thin films with excellent step coverage and thickness uniformity due to atomic scale thickness control. The key feature for this technique is the self-limiting reaction of the surface. However, the deposition temperature of ALD is lower than that of CVD. Therefore, it is hard to establish the process condition of ALD to make monoclinic VO2 (M) phase. Vanadium oxide deposited by ALD usually has V2O5 structure that is stable at low temperature. In this analysis, we investigate the nanoscale VO2 thin film using ALD with H2O reactant. At first, we perform X-ray diffraction analysis of thin film to show the crystallinity of VO2. In addition, we use X-ray photoelectron spectroscopy (XPS) to figure out the binding energy of VO2. Moreover, using scanning electron microscopy (SEM), we get the information about the thickness and uniformity of VO2 thin film. |
| 저자 | 임희우, 신창희, 김현정, 장우출, 전형탁 |
| 소속 | 한양대 |
| 키워드 | resistance random access memory; atomic layer deposition; vanadium dioxide; metal insulator transition <BR> |
