| 학회 | 한국화학공학회 |
| 학술대회 | 2004년 봄 (04/23 ~ 04/24, 공주대학교) |
| 권호 | 10권 1호, p.854 |
| 발표분야 | 재료 |
| 제목 | Application of Electric Field to Grow Bulk Single Crystals |
| 초록 | Large-diameter, high-quality Si wafers are required to the advancement of ultra-large-scale-integrated circuit (ULSI) device processing. Therefore, new crystal growth technique is needed to obtain large-diameter, high-quality Si crystals containing homogeneously distributed oxygen in the concentration required for ULSI device processing. To address this requirement, a new crystal growth technique using electromagnetic force has been studied by recent crystal growth researchers. In this work, the variation of electrical resistance in bulk crystal growth configuration with the application of electric field has been studied with prototype experiment and mathematical model. |
| 저자 | 왕종회1, 임종인1, 이경희2 |
| 소속 | 1요업(세라믹)기술원, 2동양공업전문대 |
| 키워드 | Modeling; Simulation; Silicon; Crystal Growth; Electric Field |
| VOD | VOD 보기 |
| 원문파일 | 초록 보기 |
