| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Correlation between Crystallinity, Charge Transport, and Electrical Stability in an Ambipolar Polymer Field-Effect Transistor Based on Poly(naphthalene-alt-diketopyrrolopyrrole) |
| 초록 |
We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich NAPDO and electron-deficient DPP-EH. The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a mobility of 3.64 × 10−3, 0.37 × 10−3 cm2/(V s) (hole, electron). Annealing at 200 °C yielded hole and electron mobilities of 0.078 and 0.002 cm2/(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, AFM, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. |
| 저자 |
김범준1, 이효상2, 이중석3, 오세용4, 김봉수2, 조정호1
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| 소속 |
1성균관대, 2한국과학기술(연), 3숭실대, 4서강대 |
| 키워드 |
ambipolar field-effect transistors (FETs); diketopyrrolopyrrole; crystallinity; electrical stability; polymer semiconductor
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| E-Mail |
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