| 학회 |
한국화학공학회 |
| 학술대회 |
2022년 봄 (04/20 ~ 04/23, 제주국제컨벤션센터) |
| 권호 |
28권 1호, p.956 |
| 발표분야 |
[주제 12] 화학공학일반(부문위원회 발표) |
| 제목 |
Organic Ternary Logic Circuits Demonstration through 3D-Stacked Nonvolatile Floating-Gate Memory |
| 초록 |
Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have great attention for increasing information processing density without increasing additional transistor and the circuit complexity. in this paper, organic ternary logic inverter (T-inverter) with flash memory was demonstrated, to control the T-inverter operation through the channel conductance control of flash memory systematically. we adopt all-dry process, to fabricate vertically stacked 3-dimensional (3D) T-inverter. The vertical stacked structure enables increase the integration density. To obtain low-voltage operation, ultrathin polymer dielectrics are utilized. Therefore, we could reduce the programming voltage as well as operating voltage. Fabricated 3D T-inverter showed full-swing operation, ideal intermediate logic value (~VDD/2), high DC gain exceeding 20 V/V as well as low-voltage operation (<5 V). Moreover, 3D T-inverter showed excellent long-term stability (change of output voltage less than 3% after 104s). |
| 저자 |
이창현1, 임성갑1, 최준환1, 이충열1, 박홍근1, 이승민1, 김창현2, 유호천2
|
| 소속 |
1KAIST, 2가천대 |
| 키워드 |
고분자(Polymer) |
| E-Mail |
|
| 원문파일 |
초록 보기 |
