| 초록 |
Graphene has widely attracted much attention because of its extraordinary properties. For applying various applications, transfer process has been inevitably required to the target substrate from metal catalyst surface. The significant defects, however, have been generated, and it significantly limited to the quality of the synthesized graphene. A novel method is described for the direct growth of patterned graphene on dielectric substrates by CVD in the presence of Cu vapor and using a solid carbon source, 1,2,3,4-tetraphenylnapthalene (TPN), as the precursor. By exposing UV/Ozone to the carbon film, we can enhance the interaction between carbon source and target substrate. Therefore, the direct growth CVD graphene samples can be successfully prepared on various dielectric insulator substrates such as SiO2 or Al2O3. The direct growth CVD graphene using this growth method shows excellent mechanical and chemical stability compared to the conventionally transferred graphene. |
