| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 | 30권 2호 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Characteristics of F8T2 Organic Thin-Film Transistors with a diversity of Gate Insulator |
| 초록 | The electrical performance of organic electronic devices such as organic thin-film transistor (OTFTs) has steadily increased over the past several years.1,2 To minimize manufacturing cost, the OTFT fabrication process should ideally solution-based methods such as a spin-coating, a dip-coating or a ink-jet printing.3 Especially, the gate dielectric layer is one of the critical materials in OTFTs , since the electrical characteristics and the density of carriers in the conduction channel of the OTFTs are controlled by the gate insulator capacitance. We have fabricated the OTFT devices using F8T2 as the semiconducting layer. F8T2. is typical solution-process semiconductor And we were observed the interface and electrical properties. 1. Horowitz, G. Adv, Mater. , 1998, 10, 365-377 2. Martin, S.: Hamilton, M.C. : Kanicki, J.J. , SID, 2003, 11, 543-549 3. C. Reese, Materialstoday, 20, (2004) |
| 저자 | 명혜진1, 진인주2, 김철암1, 강승열1, 유인규1, 서경수1, 안진희3 |
| 소속 | 1한국전자통신(연), 2인하대, 3한국화학(연) |
| 키워드 | OTFT; f8T2; gate insulator |
