| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
B. Nanomaterials and Processing Technology((나노소재기술) |
| 제목 |
Improved performance uniformity of inkjet-printed n-channel organic field-effect transistors and complementary inverters |
| 초록 |
In the present study, we demonstrate inkjet-printed n-type organic field-effect transistors (OFETs) and their complementary inverters with high performance uniformity, using soluble PDI8-CN2. The device performance and uniformity were significantly improved by inkjet-printing a PDI8-CN2 solution onto a heated substrate (60 C). The printed features, which were discontinuous crystalline films at RT, were uniform continuous film when the substrate temperature was increased to 60 C. Optimized n-channel PDI8-CN2 FETs showed a high field-effect mobility of 0.06 cm2/Vs, a high on/off current ratio of ~106, and a high uniformity that was within 10% with a bottom-gate/bottom-contact device configuration. Inkjet-printed organic complementary inverters were constructed by direct inkjet-printing of n-channel (PDI8-CN2) and p-channel (TIPS-Pentacene or P3HT) organic semiconductors onto SiO2 gate dielectrics. The printed organic inverters exhibited both a high voltage gain of more than 30 and a low operation voltage of ~10 V. |
| 저자 |
백강준1, 김동윤2, 정순원1, 구재본1, 유인규1, 김동유2, 노용영3
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| 소속 |
1한국전자통신(연), 2광주과학기술원, 3한밭대 |
| 키워드 |
Organic Field-Effect Transistor; Inverter; Inkjet
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| E-Mail |
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