| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
고분자가공/복합재료 |
| 제목 |
A Facile Route for Patterned Growth of graphene in a Single-Step Process |
| 초록 |
Graphene is expected to play a role as an essential building block of 2D integrated circuit due to the simple modification of its electrical properties by doping and patterning. However, in order for 2D integrated circuit to be well worked, it is necessary to find another building block as insulator and combine these two building blocks into one circuit. Recently, although the lateral hetero-structures with graphene and hexagonal boron nitride can be grown using two-step CVD method, it is complicated and not applicable to the system with more than two components. Here, we report that one step growth of graphene/amorphous carbon (G/a-C) hetero-structures from solid source as polystyrene (PS) via UV irradiation. The chemical pattern of neat/crosslinked PS via UV irradiation on copper foil converted to the pattern of G/a-C in CVD. Because the resistance of amorphous carbon is 100 times higher than that of graphene, amorphous carbon is worked as insulator. |
| 저자 |
박범진1, 박재성2, 김용진3, 유성욱1, 전금혜1, A. Mischenko4, 현승1, K. S. Novoselov4, 김광수5, 홍병희3, 김진곤1
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| 소속 |
1포항공과대, 2한국표준과학(연), 3서울대, 4Univ. of Manchester, 5UNIST |
| 키워드 |
graphene; patterned growth; solid source growth
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| E-Mail |
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