| 학회 |
한국공업화학회 |
| 학술대회 |
2013년 가을 (10/30 ~ 11/01, 대전컨벤션센터) |
| 권호 |
17권 2호 |
| 발표분야 |
포스터-콜로이드.계면화학 |
| 제목 |
Surface Modification of a Polyimide Gate Insulator for Solution-Processed ZnO Thin-Film Transistors |
| 초록 |
We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm2/Vs and 2.12 x 106, respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive. (This study was published in Langmuir, 2013, 29, 7143.) |
| 저자 |
장광석1, 위두영1, 안택2, 가재원1, 이미혜1
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| 소속 |
1한국화학(연), 2경성대 |
| 키워드 |
유기절연체; 트랜지스터; 용액공정
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| E-Mail |
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