| 초록 |
Directed self-assembly of block copolymer is one of the most promising candidates for sub-20nm scale lithography due to its cost effectiveness and outstanding pattern resolution. However, further improvements of line edge fluctuation and etching selectivity of PMMA-b-PS block copolymer remain as critical challenges. Here, we suggest a newly designed block copolymer that can form nanoscale patterns with relatively improved LER and LWR and a higher etching resistance compared to PMMA-b-PS. The block copolymer is synthesized by RAFT polymerization copolymerized with a functionalized monomer, which has hydrophobicity and a high etch selectivity under helium plasma. The modified block copolymer shows better pattern roughness than conventional PMMA-b-PS due to about two-times higher Flory-Huggins interaction parameter (χ). Even though it has a high χ value, the polymer can form perpendicular lamellae morphology by short high-temperature thermal annealing. |
