| 초록 |
Chemical vapor deposition (CVD) technique has become one of the most widely used process in the synthesis of graphene owing to its capability in large-area and uniform synthesis with great potentials in mass production. However, few-layer graphene patches are typically generated at grain boundaries or defect sites in the metal substrate, which lowers the overall qualities of graphene film. In this work, we provide that various configurations of cooling conditions, controlled by the speed of cooling rate, were examined and its effect on several physical properties were investigated, and it is found that the cooling rate plays an important role in producing high-quality single-layer graphene without few-layer patches. The results in this study shall provide valuable information in the synthesis of high-quality graphene, and hence, will have a beneficial influence on various applications of CVD graphene such as flexible displays, optoelectronics, and chemical sensors. |
