| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 가을 (10/10 ~ 10/12, 경주컨벤션센터) |
| 권호 |
43권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Aging temperature control of Aqueous Precursour Solution for High performance Metal-Oxide Field-Effect Transistors |
| 초록 |
The effect of aging temperature of metal nitrate aqueous precursor solution on the electrical characteristics of metal oxide thin-film transistors (TFTs) was investigated. The aqueous solution was aged at various conditions and the metal oxide active layer was formed by annealing at 250°C. Metal oxide TFTs based on the active layer prepared from the aged aqueous solution under optimized conditions showed much improved performance compared to that of Metal oxide TFTs based on the active layer prepared from the aqueous solution without aging. The electron mobility (μ) has been increased by more than 30 times. In addition, a load-type inverter was constructed by connecting a simple load-resistor to evaluate the applicability of the In2O3 TFTs in a logic circuit and the switching characteristics was investigated in detail. |
| 저자 |
박준용, 표승문
|
| 소속 |
건국대 |
| 키워드 |
metal oxide; solution process; thin film transistors
|
| E-Mail |
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