| 초록 |
Since the beginning of semiconductor industry, densification of devices has always been a main target to improve performance of integrated circuit chips and reduce a cost per bit. In these days, critical dimension has been scaled down to nanometer in a high-end product market. Those downsizing, however, is becoming increasingly difficult due to demanding technical issues especially for the etch process. In this work, some cases of 3D feature profile simulation were performed to suggest a direction for the development of next generation devices in terms of the high aspect ratio contact hole (HARC) plasma etch process. Plasma information was calculated from Zero-D reactor scale simulator to presume typical environment of capacitively coupled plasma chamber. Then virtual structures representing aspect ratio from 100 to 200 were simulated to discover how does the feature evolve. According to the results, the fundamental reason for making the etch process difficult as the aspect ratio increased was found in particle behavioral point of view. We expect that our computational research could give an opportunity to break through the current limits in HARC etching process. |
