| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
B. Nano materials and processing Technology(나노소재기술) |
| 제목 |
Transparent Oxide Thin Film Transistor including Highly conductive Soluble Oxide Electrode |
| 초록 |
In this study, we fabricated Transparent Thin Film Transistor(TTFT) on glass substrate and Si wafers employed inkjet printed S/D and spin-coated gate electrode. Selective doping into the sol–gel derived indium tin oxide (ITO) materials tailors the electrical properties to range from metallic to semiconducting characteristics. We determined the composition of sol-gel derived highly conductive ITO under microwave irradiation. Microwave annealing was more efficient to remove organic component and solvent molecule from the ITO precursor, thereby improving the film conductivity. To finely pattern transparent microelectrodes, we developed sol-gel ITO inks by controlling additives and various concentrations. Integration of a spin-coated zinc tin oxide (ZTO) semiconductor with an ink-jet-printed ITO electrode creates a transparent TFT with high performance and good transparency (~90%). The conductivity of ITO thin film is increased as increasing annealing temperature except for low temperature region from 100 oC to 300 oC. This proof-of-concept study can open up new possibility for realizing ‘all soluble transparent applications’. |
| 저자 |
송근규, 문주호, 정양호, 김영우, 전태환, 김아름, 정영민
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| 소속 |
연세대 |
| 키워드 |
indium tin oxide; Oxide Thin Film Transistor; Soluble Oxide Electrode
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| E-Mail |
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