| 초록 |
Graphene has shown outstanding physical, chemical, and optoelectrical properties. Specially due to the high conductivity and excellent transmittance, the chemical vapor deposition (CVD) based graphene films have been received significant attention as a promising transparent electrode for a indium tin oxide (ITO) alternative. However, for real commercialization of graphene films and for the use as a key material in semiconductor based technologies, control of optoelectronic properties of graphene films via a controllable graphene structural modification should be studied. Herein, we introduce an electron-beam irradiation on CVD-based graphene films to modify the graphene structure and thus to study changes in optoelectrical properties of graphene. With various irradiation conditions of graphene films have been systemically investigated. |
