| 초록 |
Solution processed metal oxide electronics could potentially meet the requirements of commercial large area electronics, such as high-throughput fabrication processes and a choice of materials with appropriate electrical performance characteristics, including conductor, semiconductor and insulator. However, this area still faces several challenges, such as low performance, high annealing temperatures, and the inability to fine-tune intrinsic properties. An intensive study of interface optimization, novel fabrication concepts, and new materials development can addresses critical issues in solution processed metal oxide semiconductor electronics. The new precursor designing principle, processing concepts and hybrid interface afford the development of high performance electronic materials (conductor, semiconductor, insulator), low processing temperature (Tprocess ~ 60 oC) and device stabilzation against Cu ion and gas diffusion. |
