| 초록 |
With the continuous threat of urban air pollution, the need of highly sensitive gas sensing technology is increasingly attracting more interest in several fields of application, including industrial production, automotive industry, medical devices, indoor air quality, environmental studies and so on. Among many types of gas sensors, metal-oxide semiconductor (MOS) based gas sensors have been quite attractive for their advantages of fast response and high sensitivity to a wide range of gases, but the high temperature (usually around 200 ~ 400 °C) needed for effective desorption of target gases in semiconductor type gas sensors remains as a challenge in the case of integrations to multi-sensors and wearable gas monitoring applications. In this work, we researched the effectiveness of a UV switching technique during the measurement of NO2 gas sensing using a metal oxide semiconductor (MOS)-based thin-film transistor (TFT)-type gas sensor, enabling gas sensing at room temperature. |
