| 초록 |
Photoacid generators (PAGs) have been widely used as a key component in the improvement of photoresist performance. The PAG bound polymer resist has recently been important issue for solving the problems such as PAG aggregation and acid diffusion control with the use of PAG blended resist. A triphenylsulfonium triflate(TPSMA) as a PAG, was synthesized and copolymerized with methyladamantyl methacrylate(MAMA) and gamma-butyrolactone methacrylate(GBLMA) by radical reaction for a new PAG bound polymer resist. The characterization of polymers was carried out by 1H NMR, Contactangel, TGA and DSC. Resist can be known of possibility to application of ArF Lithography. PAG bound- and blended- resists were employed to KrF, ArF in order to demonstrate the effect of the bound resist. The properties of line width roughness (LWR) and line edge roughness (LER) were improved by using the PAG bound resist. The resist were successfully applied for the fabrication of nano-scale patterns. |
