| 학회 | 한국화학공학회 |
| 학술대회 | 2019년 가을 (10/23 ~ 10/25, 대전컨벤션센터) |
| 권호 | 25권 2호, p.1787 |
| 발표분야 | 재료 (Materials) |
| 제목 | Mixed dimensional ultra-wide bandgap p-n heterojunction of diamond/β-Ga2O3 for a solar-blind photodiode |
| 초록 | β-Ga2O3 and diamond have been studied as novel ultra-wide bandgap (UWBG) semiconductors for power electronics and optoelectronics with outstanding material properties. However, the potential of UWBG semiconductors has not been fully understood since it is difficult to form p-n homojunctions. Due to the difficulty in p-type and n-type doping for β-Ga2O3 and diamond respectively, they can be mutual ideal candidates for constructing the p-n heterojunctions. The integration of diamond with extremely high thermal conductivity also poses the merits of effective heat dissipation of β-Ga2O3 with low thermal conductivity. UWBG p-n heterojunction based on p-diamond substrate and n-type exfoliated β-Ga2O3 nano-layer was demonstrated. The UWBG p-n heterojunction exhibited excellent rectification ratio and high reverse breakdown voltage. With cut off wavelength shorter than 280 nm (UV-C), the p-n heterojunction also showed outstanding solar-blind photoresponse performances including high responsivity and high rejection ratio. |
| 저자 | 김현, 김지현 |
| 소속 | 고려대 |
| 키워드 | 재료 |
| VOD | VOD 보기 |
| 원문파일 | 초록 보기 |
