| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Study of the impact of first stage growth manipulation and SiC substrate polarity on AlN epilayer |
| 초록 |
Aluminum nitride (AlN) is an important material for optoelectronic devices active in the deep ultra-violet range due to its wide band gap (over 6eV), excellent thermal conductivity and chemical stability. AlN is often heteroepitaxially grown on substrates made of other materials due to the lack of large bulk AlN single crystal. The improvement of AlN epilayers quality is a key to boost the performance of AlN-based devices. Silicon carbide (SiC) substrate with close lattice matching (a/ao= 0.9%) is a promising substrate-material for growth of AlN. In order to obtain high quality epilayers, a fundamental understanding of the SiC and AlN interface during the growth process is critically necessary. In this work, the impact of first stage growth manipulation and SiC substrate polarity on the epitaxial AlN layer is investigated. These films were grown on C face and Si face of SiC (0001) substrates using plasma-assisted molecular beam epitaxy (PAMBE). There are three cases the first stage growth manipulation were applied on each face of SiC substrate: first exposure with Aluminum flux, first exposure with Nitrogen plasma and simultaneous exposure. The sample characterizations were performed by atomic force microscopy (AFM), X-ray rocking curves measurement and transmission electron microscope (TEM). The AlN epilayers in cases of first exposure with Nitrogen plasma or simultaneous exposure give smoother surfaces. However, from the X-ray results, the AlN films firstly exposed to Aluminum flux have better crystallinity in both case epitaxy film on Si face and C face. The structures of AlN/SiC interfaces further were investigated from TEM results. |
| 저자 |
Duy Duc Le1, Dong Yeob Kim2, Soon-Ku Hong1
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| 소속 |
1Department of Advanced Materials Engineering, 2Chungnam National Univ. |
| 키워드 |
Aluminum Nitride (AlN); Plasma-assisted Molecular Beam Epitaxy (PA MBE); Silicon carbide (SiC)
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| E-Mail |
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