| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 가을 (10/24 ~ 10/26, 부산 BEXCO) |
| 권호 |
18권 2호, p.2722 |
| 발표분야 |
Advanced Polymer Materials Symposium I |
| 제목 |
Organic Nonvolatile Resistive Switching Memory Based on a Controlled Diblock-Copolymer Nanostructure |
| 초록 |
We demonstrated a facile method for a organic nonvolatile resistive switching memory via selective incorporation of fullerene derivatives, [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), into nanostructure of self-assembled poly(styrene-b-methyl methacrylate) (PS-b-PMMA) diblock copolymer. PS-b-PMMA diblock copolymer provided a spatially ordered nanotemplate with a 10 nm PS nanosphere domain surrounded by PMMA matrix. It was found that spin casting of blend solution of PS-b-PMMA and PCBM spontaneously formed smooth films without PCBM aggregation in which PCBM molecules were incorporated within PS nanosphere domain of PS-b-PMMA nanostructure by preferential intermixing propensity of PCBM and PS. The ReRAM based on the well-defined PS-b-PMMA/PCBM nanostructure exhibited significantly improved bipolar-switching behavior with highly stable and reproducible properties at low operating voltages under the ambient condition compared to the devices based on homo-polymer composites (PS or PMMA : PCBM) Finally, the flexible memory devices were achieved and no degradation was observed before and after bending. |
| 저자 |
김연상 |
| 소속 |
서울대 |
| 키워드 |
Memory; Diblock; Nanostructure
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| E-Mail |
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| 원문파일 |
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