| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Electro Potentiostatic Activation for Improvement of Efficiency in GaN-based LEDs |
| 초록 | A novel electrochemical potentiostatic activation (EPA) method was examined in order to enhance the hole concentration of p-type GaN epitaxial layer. EPA experiments were carried out using full structure blue and UV LED samples. GaN-based LEDs samples were immersed into 1.0M HCl solution and electric voltage was applied to p-type GaN layer in order to increase the hole concentration by breaking the Mg-H complex. An indium-soldered LED sample was used as the working electrode (WE), Pt sheet as the counter electrode (CE) and SCE acts as a reference electrode(RE). Activation process is carried out by applying Voltage between the working electrode and reference electrode. Without EPA activation and EPA activated samples were considered. Internal Quantum Efficiency and L-I characteristics were used for evaluating the device performance after the EPA experiment. As a result, the electrochemical potentiostatic activation (EPA) method was proved to effectively improve the efficiency of GaN-based LEDs. In order to UV LEDs, light output power was enhanced by ~20% at input current of 40mA, which is originated from the IQE improvement of ~20% in EPA activated sample compared to the reference sample. |
| 저자 | 서효원, Wael Z. Tawfik, 배서정, 이준기 |
| 소속 | 전남대 |
| 키워드 | EPA; p-GaN; activation |
