| 초록 |
TiO2 thin films were prepared on the p-type Si(100) substrates by atomic layer deposition (ALD) using titanium tetra-isopropoxide (TTIP) and NH3 gas. The advantage of using NH3 gas as a reducing agent compared with oxygen-containing oxidants such as H2O, H2O2, O3, and O2 plasma is to realize the TiO2 film deposition while minimizing the formation of low-k interfacial layers such as SiO2 or TixSiyOz. The interfacial layer thickness in TTIP/NH3 ALD process was thinner than that in TTIP/O2 PEALD process. In addition, the interfacial layer thickness of TiO2 film formed by TTIP and NH3 gas was maintained after O2-annealing process at 600°C, while that of TiO2 film formed by TTIP and O2 plasma was increased by about 50%. In this study, we will discuss further results of ALD TiO2 films including the interfacial layer properties. |
