| 초록 |
Organic field-effect transistor-based nonvolatile memory (OFET-NVM) with semiconducting nano-floating-gates offers additional benefits over OFET-NVMs with conventional metallic floating-gates due to the facile controllability of charge storage based on the energetic structure of the floating-gate. Here, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nano-floating-gate. Moreover, the device performance is improved by co-mixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating-gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and de-trapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages. |
