| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | Memory Operation Mechanism for Organic Nonvolatile Memory |
| 초록 | We developed organic nonvolatile memory fabricated with the device structure of Al/α-NPD/Al nano-crystals surrounded by Al2O3/α-NPD/Al. These devices show excellent nonvolatile memory behavior; i.e., Vth of 3V, Vp (program) of 5V, Ve (erase) of 8V, Ion (program)/Ioff (erase) of ~6x101, and erase/program cycles of 1x105. They presented seven different reversible current paths approving electron charge or discharge on Al nano-crystals. Thus, our device demonstrated multi-level nonvolatile memory behavior. In our report, we proposed an organic nonvolatile memory fabricated with the device structure of Al/α-NPD/Al nano-crystals surrounded by Al2O3/α-NPD/Al. Particularly, Al nano-crystals were produced via Al layer evaporation with 1.0 Å/sec on α-NPD followed by O2 plasma oxidation. In addition, for our devices we examined nonvolatile memory characteristics and investigated the dependency of bi-stable switching characteristic on device operating temperature to delineate the current conduction mechanism by which they behave multi-level nonvolatile memory. *This research was supported by Korea ministry of commerce, industry and energy for the 0.1 Terabit Non-volatile Memory Development. |
| 저자 | 남우식1, 박재근1, 서성호1, 김윤중2 |
| 소속 | 1한양대, 2한국기초과학지원(연) |
| 키워드 | Memory; bi-stable; organic; nonvolatile |
