| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Stress Immunity to Vth Shift of IGZO TFT Via Plasma Passivation |
| 초록 | In order to attacin stable reliability with thin film transistor (TFT), various materials and proces steps has been studied. In this study, the impacts of plasma passivation at the interface between gate dielectric and channel material within TFT, where ALD HfO2 and ALD IGZO materials were employed, resepectively, on the threhold voltage shift (ΔVth) have been investigated. Interface treatment was done using amonia and nitrogen gas sources and besides interface passivation, its process was also carried out within gate dielectrics. As passivation is away from the interface between gate dielectric and channel region, signifcant improvements such as less ΔVth, higher Ion, lower S.S are achieved. This finding indicate that nitrogen incorporation is an efficient way to enhance device performance as well as reliability and its amount and profile should be well controlled. Acknowledgment This work was supported by the Future Semiconductor Device Technology Development Program (10044842) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) |
| 저자 | 임동환, 한훈희, 최창환 |
| 소속 | 한양대 |
| 키워드 | Passivation; Plasma; TFT |
