| 초록 |
Recently, low dielectric constant materials are of considerable interest for advanced microelectronic devices. Poly (methylsilsesquioxane), PMSSQ, have particularly attracted much interest because of a relatively low dielectric constant (k=2.7~3.0), low moisture absorption, and high thermal stability to 500 ℃ when fully cured. However, the structure analysis of PMSSQ is restrained, since PMSSQ consists of various structures such as cagelike and ladderlike. In this study low-k films were prepared from PMSSQ and MTMS-BTMSE copolymers with controlled structure. The end-functional groups and the molecular weights of each polymer were further manipulated by fractionation method. Synthesized polymers were investigated using NMR, GPC, TGA and FT-IR. Low-k thin films were characterized using Ellipsometer and FT-IR. The effect of molecular structure of copolymers on the thin film property was also discussed. |
