| 학회 | 한국고분자학회 |
| 학술대회 | 2003년 가을 (10/10 ~ 10/11, 부경대학교) |
| 권호 | 28권 2호, p.392 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Application of PMMA/PVdF Blends as High k Materials for OTFT |
| 초록 | As portable electronic devices become more demanding in modern information society, the organic thin film transistor (OTFT) becomes more important as a driving circuit and a switching device due to its flexibility, low cost and low temperature processing. To drive a circuit efficiently under low voltages, high dielectric constant (k) materials are necessary for OTFT. We chose PMMA/PVdF blends as dielectric materials. Crystalline PVdF has relatively high dielectric constant of 8.4 at 1 MHz. However, PVdF can't be used due to its high crystallinity, which makes the subsequent patterning process difficult. Therefore, we tried to tailor the electrical properties and morphology by blending PVdF with amorphous PMMA (k = 2.6). PMMA/PVdF blends were completely miscible over the entire range of composition by the existence of single Tg. The blend of PVdF 30 wt% was optimum in view of dielectric constant (k = 4.0) and no crystallinity. And dielectric constants in the operating temperature of OTFT (near 40 ℃) maintained those of room temperature. Also it was spinnable on ITO/organic substrate, insoluble in a developer and a photoresist. And there was no change in the morphology even when it was heated to the baking temperature (near 100 ℃) of lithography processes. |
| 저자 | 천건용1, 김성현2, 이희우1 |
| 소속 | 1서강대, 2한국전자통신(연) |
| 키워드 | dielectrics; PMMA; PVdF; OTFT |
