| 초록 |
Gallium oxide has gained a significant attention as the next generation wide bandgap semiconductor owing to its direct bandgap of around 4.9 eV, superior thermal and chemical stability. The Baliga’s figure of merit of β-Ga2O3 material (at 3214) is much larger than those of other wide-bandgap semiconductors including SiC (at 317) and GaN (at 1089). Currently, single crystalline substrates over 2 inches can be grown and the size is still increasing. The applications include power semiconductor devices and solar blind photodetectors. Although gallium oxide is not a material formed by two-dimensional (2D) van der Waals interaction, the structural characteristics allow its mechanical exfoliation. This exfoliation method is widely used in obtaining 2D materials such as graphene. The mechanically exfoliated gallium oxide flakes were then used to fabricate various optical and electrical devices. Further details on the device fabrication and characterization of MOSFET, MISFET, solar-blind photodetector, p-n junction, etc. will be presented. |
