| 초록 |
Molybdenum disulfide (MoS2) monolayer is a very interesting material for various applications because of its two-dimensional crystal structure and the existence of direct band gap. However, the synthesis of MoS2 monolayer over a large area remains a great challenge. Here we show the uniform growth of high-quality, centimeter-scale, continuous MoS2 monolayer by chemical vapor depostion (CVD). Characterization by scanning electron microscopy (SEM), Raman spectroscopy, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) shows the continuous growth of centimeter-scale MoS2 monolayer on sapphire substrates. Transmission electron microscopy (TEM) provides further information on the crystallinity and crystal orientation of the MoS2 monolayer. The synthesis approach reported in this study demonstrates the feasibility of device-quality monolayer MoS2 films with excellent uniformity and quality. |
