| 초록 |
Resistive Switching Memory (ReRAM) is one of the promising candidates for next generation nonvolatile memory. Since the early 1960s, the resistance switching behaviors of various oxides have been investigated. However most of the deposition followed the vacuum deposition techniques such as sputter, evaporation. These are difficult fabrication with low cost and large area devices. However we suggests a facilel and versatile approach for preparing resistive switching memory devices. We have observed resistance switching in niobium pentoxide film prepared by sol-gel method. Niobium ethoxide was used as precursor for sol-gel process. After depositing the Nb2O5 film, annealing was performed at approximately 620 and 450℃ for polycrystalline and amorphous structure. The device shows unipolar switching behavior and repeatable and stavel resistive switching characteristics that included a high ON/OFF ratio and a long retention time. |
