| 초록 |
Nonvolatile memory device has attracted considerable interest due to its widespread use of mobile electronics such as a Cell phone, PDA, etc. Among them, extensive studies involving nonvolatile memory properties have been reported. Here, we introduce a novel and facile approach for the preparation of nonvolatile memory devices by layer-by-layer (LbL) assembled protein multilayers based on ferritin nanoparticles. Resistive switching behavior of these nonvolatile memory devices are caused by the externally applied voltage as a result of charge trap/release of Fe3+/Fe2+ redox pairs in ferritin core (i.e., ferrihydrite). These devices show the excellent performance such as ON/OFF current ratio of 103, fast switching speed of 100ns, highly stable endurance properties. In addition, we show that one ferritin nanoparticle of about 12 nm diameters can be operated as a nanoscaled memory device. Furthermore, their memory performance can be significantly improved by LbL assembly manipulation. |
