| 초록 |
Direct printing of thin-film transistors has enormous potential for ubiquitous and lightweight wearable electronic applications. However, advances in printed integrated circuits remain very rare. The primary challenge is the lack of technology scaling in printed transistors. Here, we present a 3D integration approach to achieve technology scaling in printed transistor density, analogous to Moore’s law driven by lithography, as well as enhancing device performance. To provide a proof of principle for the approach, we demonstrate the scalable 3D integration of dual-gate organic transistors on plastic foil by printing with high yield, uniformity and year-long stability. The effective control of charge transport within the bulk of a semiconductor wrapped by two gates resolves the chronic issues of conventional single-gate organic transistors, such as high subthreshold leakage and swing, limited transconductance and low on-off ratio. In addition, the 3D stacking of three complementary transistors enables us to propose a programmable 3D logic array as a new route to design printed flexible digital circuitry essential for the emerging applications. Our 3D fabrication approach demonstrated here is applicable to other emerging printable materials, such as carbon nanotubes, oxide semiconductors and 2D semiconducting materials. |
