| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 봄 (04/12 ~ 04/13, 대전컨벤션센터) |
| 권호 |
37권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Highly Tunable Charge Transport in Layer-by-Layer Assembled Graphene Transistors |
| 초록 |
We demonstrate a controlled, systematic method to control the charge transport in graphene field-effect transistors based on layer-by-layer assembly of alternating positively and negatively charged graphene oxide followed by thermal reduction. Tuning the number of bilayers of thermally reduced graphene oxide multilayer films allowed achieving either ambipolar or unipolar transport in graphene. Based on X-ray photoemission spectroscopy, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and temperature-dependent charge transport measurements, we found that nitrogen atoms from the functional groups of positively charged graphene oxide are incorporated into the reduced graphene oxide films and substitute carbon atoms during the thermal reduction. Such nitrogen doping process occurs in different degree for graphene multilayers with different numbers of bilayers and thereby results in the interesting transition in the electrical behavior in graphene multilayers. |
| 저자 |
황현민1, 주필재2, 강문성3, 안국문2, 한중탁4, 김병수2, 임호선5, 조정호6
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| 소속 |
1숭실대, 2울산과학기술대, 3서울대, 4한국전기(연), 5전자부품(연), 6성균관대 |
| 키워드 |
graphene; layer-by-layer assembly; doping; ambipolar to unipolar transition; transistor
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| E-Mail |
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