| 초록 |
ZnO has been recognized as a promising material that can be used in various semiconductor devices. In this study, to obtain the high performence transparent conductive oxide(TCO), we have deposited Al layers between the ZnO thin film layers on the glass substrates at the same conditions by RF sputtering and postannealin. Also ZnO thin films was prepared by radio frequency (RF) sputtering on the glass substrate at room temperature using a ZnO target in oxygen or nitrogen mixtured Ar gas environment. Amount of inserted Al metal is 1.4 weight percentage (1.4 wt%). Asdeposited films were postannealed in nitrogen atmosphere at 400℃ and then investigated electrical and optical properties. By Halleffect measurement, the resistivity of the Al layer inserted ZnO films was decreased from 1.51ⅹ101 to 8.04ⅹ103 Ωcm. The transmittance is above 80% in the visible light region in all fabricated samples.. |
