| 학회 | 한국재료학회 |
| 학술대회 | 2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 | 10권 2호 |
| 발표분야 | 반도체 II(화합물) |
| 제목 | 다양한 이온 주입에 의해 전처리한 사파이어(0001) 기판에 성장시킨 GaN 에피층의 열처리 효과 |
| 초록 | GaN is an important blue-light-emitting material and can also be used in high-temperature, high-frequency and high-power microwave devices, due to its low thermal generation rate, high breakdown field, high saturation drift velocity, physical hardness and chemical inertness. Various ion-implantations were achieved on sapphire(0001) substrate. GaN epilayers were grown about 3μm thickness on pretreatment substrate by MOCVD. It is known that a pretreatment process prior to the buffer growth is needed to improve the structural and electronic properties of GaN layers grown on sapphire(0001) substrate. Although there are large differences of lattice constant and thermal expansion coefficient between sapphire and GaN epilayer, GaN or AlN buffer layer on the sapphire(0001) substrate were indispensably introduced to grow high quality GaN epilayer. Especially, Nitridation is general and simple pretreatment at high temperature in N2 or NH3 ambience. A annealing process was employed to decrease lattice strain through thermal treatment, and the electrical properties such as Hall mobility and carrier concentration were improved by this increase of crystallinity. These results showed that improvement of the GaN epilayer can be achieved by combination of various ion-implantation pretreatment of sapphire(0001) substrate and suitable annealing process. |
| 저자 | 이재석1, 진정근1, 강호재1, 박현규1, 노대호1, 변동진1, 고의관2 |
| 소속 | 1고려대, 2한국기초과학지원(연) |
| 키워드 | GaN; annealing; MOCVD |
