| 초록 |
Resistive switching (RS) in resistive random access memory (ReRAM) is generally assumed to be caused by the formation/rupture of nanoscale conductive filaments (CFs) under an applied electric field. The critical issue of ReRAM for practical memory applications, however, is insufficient repeatability of the operating voltage and resistance ratio. Here, we present an innovative approach to reliably and reproducibly control the CF growth in unipolar NiO resistive memory by exploiting uniform formation of insulating SiOx nanostructures from the self-assembly of a Si-containing block copolymer (BCP). Moreover, we report direct observations of metallic Ni CF formation and their controllable growth as well as electro-thermal simulation results. The obtained results both experimentally and theoretically support guided filament control by ultrafine SiOx nanodots (SiOx-NDs). |
