| 학회 |
한국화학공학회 |
| 학술대회 |
2004년 가을 (10/29 ~ 10/30, 호서대학교(아산캠퍼스)) |
| 권호 |
10권 2호, p.2072 |
| 발표분야 |
재료 |
| 제목 |
Copper Electroless Deposition on Iridium and Tungsten for diffusion barrier of next generation IC chips |
| 초록 |
Iridium has very desirable such as high melting point, hardness, electrical resistance. In view of these properties, we have successfully developed electroless copper plating bath and checked the physical properties of the plated films. Ideal diffusion barriers should have good adhesion to both copper and interlayer dielectrics, in addition to affording a conductive Cu-plating platform. Pd ALD has been successful on diffusion barrier such as Ta, TaN, W, Ir, and tetrasulfide self-assembed monolayer. We suggest Ir is a promising candidate to be used as a new diffusion barrier material for Cu interconnect. |
| 저자 |
김영순, 조중희, M. A. Dar, 서형기, 김길성, 신형식
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| 소속 |
전북대 |
| 키워드 |
Electroless copper deposition; diffusion barrier; Iridium; Tungsten
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| E-Mail |
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| 원문파일 |
초록 보기 |
