| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
B. Nano materials and processing Technology(나노소재기술) |
| 제목 |
A study on the growth temperatures of hydrothermally grown epitaxial ZnO thin films on p-GaN/Al2O3 substrates |
| 초록 |
Epitaxial ZnO thin films were prepared on p-GaN buffered Al2O3 (0001) substrates by single step hydrothermal technique using aqueous solution of zinc nitrate hexahydrate, sodium citrate and ammonium hydroxide with different growth temperatures in the range from 60 °C to 90 °C. The effects of growth temperatures on the crystallity, epitaxy nature, morphology, optical, and electrical properties of thin films were investigated. X-ray diffraction and transmission electron microscopy studies shows that the deposited ZnO thin films are epitaxially grown as a wurtzite hexagonal structure with orientation relationship of (0001)ZnO//(0001)GaN//(0001)Al2O3. The crystallity of deposited ZnO thin films are improved with increasing growth temperatures. The morphology of deposited ZnO thin films is smoother with increasing growth temperature. The deposited ZnO thin films have a high transmittance in the visible region and sharp edge about 375 nm. The optical band gap energy of deposited ZnO thin films are about 3.25 eV at room temperature. The room temperature photoluminescence spectra of deposited ZnO thin film showed sharp near band edge emission peak about 375 nm and broad deep level emission peak about 550 nm. The deep level emission peak of deposited ZnO thin films decreased with increasing growth temperature. |
| 저자 |
Mi Na Kang1, Seung Wook Shin2, Jong-Ha Moon3, Jeong Yong Lee, Jin Hyeok Kim2
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| 소속 |
1Photonics Technology Research Institute, 2Department of Materials Science and Engineering, 3Chonnam National Univ. |
| 키워드 |
Epitaxial ZnO; Hydrothermal Synthesis; Thin Films; Low Growth Temperature
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| E-Mail |
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