| 초록 |
Nanoporous dielectrics are required for the next generation semiconductors which have extremely small circuit dimension (＜ 32 nm scale). However, it is hard to maintain their mechanical properties at high porosities. In order to increase the properties, we have developed nanoporous dielectrics based on the copolymer of methyl trimethoxysilane (MTMS) and bis-1,2-triethoxysilyl ethane (BTESE). The higher its content, the higher the mechanical properties, the copolymer increases the crosslink density of, at the sacrifice of dielectric constant. For the feature size below 32 nm processes nanoporous dielectrics should have high elastic modulus (E ＞ 6 GPa) and low dielectric constant (k ＜ 2.2). MTMS-BTESE 25 mol% copolymer satisfied E (＞ 8 GPa), but couldn’t satisfy dielectric constant. Therefore, we tried to optimize the composition of copolymer in order to get the properties of nanoporous dielectrics required for the next generation semiconductors. |
